Spectral properties of angled-grating high-power semiconductor lasers

被引:69
作者
Sarangan, AM [1 ]
Wright, MW
Marciante, JR
Bossert, DJ
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] USAF, Res Lab DELS, Albuquerque, NM 87117 USA
基金
加拿大自然科学与工程研究理事会;
关键词
alpha-DFB; angled grating; grating waveguide; high-power semiconductor laser; tilted grating;
D O I
10.1109/3.777224
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we study the spectral properties of angled-grating high-power semiconductor lasers, also known as a distributed feedback (DFB) lasers. We have derived a closed-form expression to describe the cavity resonance. The results of this model are shown to compare favorably with experimental data. Intrinsic device parameters such as coupling coefficient and grating period are shown to be correlated to spectral and nearfield characteristics. The formulations and insights developed in this paper allow one to calculate these critical design parameters for optimum performance.
引用
收藏
页码:1220 / 1230
页数:11
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