Visible light emission from polymer-based field-effect transistors

被引：80

作者：

Sakanoue, T ^{[1
]}

Fujiwara, E

Yamada, R

Tada, H

机构：

[1] Grad Univ Adv Studies, Dept Struct Mol Sci, Okazaki, Aichi 4448585, Japan

[2] Okazaki Natl Res Inst, Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1710713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors (FETs) based on poly [2-methoxy, 5-(2'-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV) were prepared with bottom-contact type interdigital electrodes of Cr/Au and Al/Au on the SiO2/Si substrates. MEH-PPV exhibited a p-type semiconducting behavior and orange light emission was observed when the devices were operated in vacuum. It was found that the luminescence efficiency of the FETs with Al/Au electrodes was higher than that of Cr/Au electrodes. The simultaneous injection of holes and electrons into MEH-PPV occurred efficiently with the application of Al/Au heteroelectrodes. (C) 2004 American Institute of Physics.

引用

页码：3037 / 3039

页数：3

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