Defect contributions to conductivity in poly(3-hexylthiophene)?

被引:13
作者
Caruso, A. N.
Feng, D. -Q.
Losovyj, Ya. B.
Schulz, D. L.
Balaz, Snjezana
Rosa, Luis G.
Sokolov, A.
Doudin, B.
Dowben, P. A.
机构
[1] N Dakota State Univ, Ctr Nanoscale Sci & Engn, Fargo, ND 58102 USA
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[3] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA
[4] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 06期
关键词
D O I
10.1002/pssb.200541257
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We find evidence for a gradual change in the electronic properties of spin coated poly(3-hexylthiophene) thin films with temperature. The conduction properties appears to be mediated by hopping conduction dominated by a low density of defects states within the highest occupied molecular orbital to lowest unoccupied molecular orbital gap, not by a change in band gap. The photoemission and transport measurements indicate a loss of charge mobility or carrier concentration occurs with decreasing temperature, while the molecular configuration (through chain conjugation) also changes with temperature. The defects states identified by photoemission (-1.7 eV) as well as others contributing to the transport properties are believed to be very heterogeneous along the polymer backbone. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1321 / 1330
页数:10
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