A study of bulk NaxCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/ln2S3 interface of solar cells

被引:31
作者
Barreau, N.
Deudon, C.
Lafond, A.
Gall, S.
Kessler, J.
机构
[1] Univ Nantes, Lab Mat Photovolt, F-44322 Nantes 03, France
[2] Univ Nantes, CNRS, UMR 6502, Inst Mat Jean Rouxel, F-44322 Nantes 03, France
关键词
NaxCu1-xIn5S8; indium sulfide; buffer layer;
D O I
10.1016/j.solmat.2005.11.008
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The structural and optical properties of NaxCu1-xIn5S8 powders, with x = 0, 0.25, 0.5, 0.75 and 1, are determined. It is shown that all of the samples have the same crystalline structure, which indicates the existence of a solid solution over the whole range of x (i.e. 0 <= x <= 1). The increase of the optical band gap of these compounds is found to be linear between x = 0 (E-g = 1.50 eV) and x = 0.75 (1.85 eV), whereas for x = 1 (i.e. NaIn5S8) E-g is found to be 2.40 eV, which is much higher than the value expected from the linear slope. Such an evolution shows that the copper and the sodium weigh differently on the optical properties of the material. In thin film solar cells with indium sulfide buffer layer, NaxCu1-xIn5S8 compounds are formed at the Cu(In,Ga)Se-2/In2S3 interface. The impact of their properties, here determined, on these thin film solar cells is discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:1840 / 1848
页数:9
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