Role of Percolation in the Conductance of Electrolyte-Gated SrTiO3

被引：52

作者：

Li, Mingyang ^{[1
,2
]}

Graf, Tanja ^{[1
]}

Schladt, Thomas D. ^{[1
]}

Jiang, Xin ^{[1
]}

Parkin, Stuart S. P. ^{[1
]}

机构：

[1] IBM Almaden Res Ctr, San Jose, CA USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 19期

关键词：

HOPPING REGIME; SUPERCONDUCTIVITY; MAGNETORESISTANCE; CONDUCTIVITY; MANGANITES; INTERFACES; TRANSITION; INSULATOR; SYSTEMS; FILM;

D O I：

10.1103/PhysRevLett.109.196803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the electrolyte-gate-induced conductance at the surface of SrTiO3(001). We find two distinct transport regimes as a function of gate voltage. At high carrier densities, a percolative metallic state is induced in which, at low temperatures, clear signatures of a Kondo effect are observed. At lower carrier densities, the resistance diverges at low temperatures and can be well described by a 2D variable range hopping model. We postulate that this derives from nonpercolative transport due to inhomogeneous electric fields from imperfectly ordered ions at the electrolyte-oxide interface.

引用

页数：5

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