Series connection of IGBT's with active voltage balancing

被引：62

作者：

Hong, SW ^{[1
]}

Chitta, V

Torrey, DA

机构：

[1] Hyosung Ind Co Ltd, Inst Res & Dev, Seoul 121020, South Korea

[2] Rensselaer Polytech Inst, Dept Elect Power Engn, Troy, NY 12180 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1999年 / 35卷 / 04期

关键词：

insulated gate bipolar transistor; insulated gate bipolar transistor gate drive; overvoltage control;

D O I：

10.1109/28.777201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes an active gate drive circuit for series-connected insulated gate bipolar transistors (IGBT's:) with voltage balancing in high-voltage applications. The gate drive circuit not only amplifies the gate signal, but also actively limits the overvoltage during switching transients, while minimizing the switching transients and losses. In order to achieve the control objective, an analog closed-loop control scheme is adopted, The closed-loop control injects current to an IGBT gate as required to limit the IGBT collector-emitter voltage to a predefined level. The performance of the gate drive circuit is examined experimentally by the series connection of three IGBT's with conventional snubber circuits. The experimental results show the voltage balancing by an active control with wide variations in loads and imbalance conditions.

引用

页码：917 / 923

页数：7