Field-induced nucleation in phase change memory

被引：115

作者：

Karpov, V. G. ^{[1
]}

Kryukov, Y. A. ^{[1
]}

Karpov, I. V. ^{[2
]}

Mitra, M. ^{[2
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[2] Intel Corp, Santa Clara, CA 95052 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.78.052201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theory of field-induced crystal nucleation is developed and verified experimentally for the case of switching in nanoglasses of phase change memory. For symmetry-breaking strong electric fields, it predicts needle-shaped crystallites with nucleation barriers lower than that of spherical nuclei and a strong field dependent. We have observed bias dependent switching for times and temperatures far,beyond those typically reported and supportive of our predictions, in particular, switching time exponential in voltage and temperature.

引用

页数：4

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