N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

被引：440

作者：

Malenfant, PRL

Dimitrakopoulos, CD

Gelorme, JD

Kosbar, LL

Graham, TO

Curioni, A

Andreoni, W

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Zurich Res Lab, Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N,N-'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm(2) V-1 s(-1) and current on/off ratios >10(5) were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of similar to20 Angstrom for thin evaporated films of PTCDI-C8H, which is consistent with the value of similar to21 +/- 2 Angstrom obtained from our simulations when an interdigitated packing structure is assumed. (C) 2002 American Institute of Physics.

引用

页码：2517 / 2519

页数：3

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[1] New advances in chemistry and materials science with CPMD and parallel computing [J].