High-resolution work function imaging of single grains of semiconductor surfaces

被引:132
作者
Sadewasser, S [1 ]
Glatzel, T [1 ]
Rusu, M [1 ]
Jäger-Waldau, A [1 ]
Lux-Steiner, MC [1 ]
机构
[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
关键词
D O I
10.1063/1.1471375
中图分类号
O59 [应用物理学];
学科分类号
摘要
The size reduction of modern electronic devices creates a growing demand for characterization tools to determine material properties on a nanometer scale. The Kelvin probe force microscope is designed to obtain laterally resolved images of the sample's work function. Using a setup in ultrahigh vacuum, we were able to distinguish work function variations for differently oriented crystal facets of single grains on a semiconductor surface. For the tetragonal solar cell material CuGaSe2 the experiments demonstrate differences as low as 30 meV between (102) and (111) oriented surfaces and up to 255 meV between ((1) over bar(1) over bar(2) over bar) and (110) surfaces. This influences the band bending of solar cell heterostructures and consequently also the solar power conversion efficiency. (C) 2002 American Institute of Physics.
引用
收藏
页码:2979 / 2981
页数:3
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