The structure of S-32 .1. Spectroscopy of highly-excited states

Assignments of I, pi, T are made to 30 levels in S-32 between 7.35 and 11.76 MeV excitation energy, making the spectroscopy of the T = 0 states rather complete up to 10 MeV and that of the T = 1 states up to 12 MeV. A reassessment of existing data in the light of the new results clarifies the spectrum of I-pi = 1(+), T = 1 states up to 15 MeV excitation energy. High-spin states (I = 5-7) below 10 MeV excitation energy have been investigated by n-gamma angular-correlation measurements with the Si-29(alpha, n gamma) reaction at E(alpha) = 14.4 MeV. Five g-wave resonances of the P-31(p, gamma) reaction, leading to the formation of I-pi = 4(+), 5+ states in S-32, have been identified between 10 and 12 MeV excitation energy. The spectrum of T = 1 states between 10.7 and 12 MeV, has been investigated by measurements of gamma-ray angular distributions on resonances of the P-31(p, gamma) reaction and by measurements of resonance strengths. Several S-32 levels between 7.35 and 8.75 MeV excitation energy were studied as final states in resonance decays. Finally a search was performed for I-pi = 0(+) resonances of the Si-28(alpha, gamma) reaction.