Process integration of embedded FeRAMs

被引：4

作者：

de Araujo, CAP ^{[1
]}

Solayappan, N

McMillan, LD

Otsuki, T

Arita, K

机构：

[1] SYMETRIX Corp, Colorado Springs, CO 80918 USA

[2] Matsushita Elect Corp, Elect Res Lab, Takatsuki, Osaka 569, Japan

来源：

JOURNAL OF ELECTROCERAMICS | 1999年 / 3卷 / 02期

关键词：

ferroelectric memories; integrated ferroelectrics; embedded microcontrollers; ferroelectric material and integration;

D O I：

10.1023/A:1009991026077

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness and compatibility of the FeRAM process with established CMOS integrated circuits. As integrated circuits technology advances in lithography, FeRAMs meet the challenge, but new problems appear. In this review, existing embedded FeRAMs of the 0.8/0.6 mu generation will be discussed. A program for the 0.35/0.25 mu generation, and the 0.18 mu challenges are outlined and addressed. The paper also reviews the application of FeRAM Smart Cards. This application is becoming the best example of embedded FeRAMs in which to demonstrate the "System-One-Chip" technology direction. Smart Card ICs clearly take advantage of the low power, high-write speed and long endurance characteristics of Ferroelectric Memories.

引用

页码：135 / 142

页数：8