A new hybrid active power filter (APF) topology

被引:117
作者
Kim, S [1 ]
Enjeti, PN [1 ]
机构
[1] Texas A&M Univ, Dept Elect Engn, Power Elect & Power Qual Lab, College Stn, TX 77843 USA
关键词
hybrid active power filter; IGBT inverter; MOSFET inverter; DSP;
D O I
10.1109/63.988669
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new hybrid active power filter topology is presented. A high er-voltage, low-switching frequency insulated gate bipolar transistor (IGBT) inverter and a lower-voltage high-switching frequency metal oxide semiconductor field effect transistor (MOSFET) inverter are used in combination to achieve harmonic current compensation. The function of the IGBT inverter is to support utility fundamental voltage and to compensate for the fundamental reactive power. The MOSFET inverter fulfills the function of harmonic current compensation. To further reduce cost and to simplify control, the IGBT and MOSFET inverters share the same dc-link via a split capacitor bank. With this approach harmonics can be cancelled over a wide frequency range. Compared to the conventional APF topology, the proposed approach employs lower dc-link voltage and generates less noise. Simulation and experimental results show that the proposed active power filter topology is capable of compensating for the load harmonics.
引用
收藏
页码:48 / 54
页数:7
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