Partial oxidation of CH4 at low pressure over SiO2 prepared from Si

被引：9

作者：

Ono, T

Kudo, H

Maruyama, J

机构：

[1] Department of Applied Chemistry, University of Osaka Prefecture, Sakai, Osaka 593

来源：

CATALYSIS LETTERS | 1996年 / 39卷 / 1-2期

关键词：

partial oxidation of CH4; CH3OH; HCHO; SiO2; catalyst;

D O I：

10.1007/BF00813733

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The oxidation of CH4 with O-2 at low pressure was carried out over SiO2 prepared from metal Si. The Si showed only total oxidation activity while the Si partly oxidized to SiO2 showed high selectivities to CH3OH and HCHO. The results on SiO2 prepared from Si were compared with those over commercial silicas. The role of SiO2 in the CH4 oxidation was discussed.

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页码：73 / 77

页数：5

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