Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

被引：67

作者：

Chen, Guohai ^{[1
]}

Shin, Dong Hoon ^{[1
]}

Iwasaki, Takayuki ^{[2
]}

Kawarada, Hiroshi ^{[2
]}

Lee, Cheol Jin ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea

[2] Waseda Univ, Sch Sci & Engn, Tokyo 1698555, Japan

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 41期

关键词：

D O I：

10.1088/0957-4484/19/41/415703

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5 -3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V mu m(-1) at the emission current density of 0.1 mu A cm(-2) and a threshold field of 1.67 V mu m(-1) at the emission current density of 1.0 mA cm(-2). The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.

引用

页数：6

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