Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

被引：2

作者：

Hirohata, A ^{[1
]}

Xu, YB ^{[1
]}

Guertler, CR ^{[1
]}

Bland, JAC ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

photon excitation; polarized laser; ferromagnet/semiconductor interface; Schottky barrier;

D O I：

10.1109/20.801022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.

引用

页码：2910 / 2912

页数：3

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