Relaxation of photoexited charge carrier concentration and mobility in μc-Si:H

被引：27

作者：

Juska, G

Nekrasas, N

Genevicius, K

Stuchlik, J

Kocka, J

机构：

[1] Vilnius State Univ, Dept Solid State Elect, LT-2040 Vilnius, Lithuania

[2] ASCR, Inst Phys, Prague 16253 6, Czech Republic

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

microcrystalline silicon; mobility; Debye radius; solar cells;

D O I：

10.1016/j.tsf.2003.11.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In muc-Si:H layers deposited on substrates at various temperatures, the relaxation of the mobility, density of the equilibrium, photogenerated and injected charge carriers using extraction by linearly increasing voltage method has been investigated. We found that in muc-Si:H layers, especially those deposited at low temperature, charge carrier mobility decreases with time, the charge carrier density relaxation is much slower, and the charge carrier dispersion is higher than in a-Si:H. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：290 / 293

页数：4

共 6 条

[1] Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films [J].