Fast power cycling test for insulated gate bipolar transistor modules in traction application

The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to a mechanical stress that can result in a failure. Lifting of bond wires is thereby the predominant failure mechanism. A fast power cycling test method activating the main failure mechanism has been developed which allows to reproduce millions of temperature changes in a short time. The applicability of fast testing is supported by a mechanical analysis. Test results show the number of cycles to failure as a function of temperature changes for an IGBT single switch. A descriptive model is deduced from the results.