Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN

被引：52

作者：

Davydov, SY ^{[1
]}

机构：

[1] St Petersburg State Electrotech Univ, St Petersburg 197376, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 01期

关键词：

D O I：

10.1134/1.1434511

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Estimation of dielectric, optical, electrooptical, magnetic, elastic, photoelastic, piezoelectric, and phonon characteristics of XN (X = B, Al, Ga, In) crystals is performed by simple methods using quantum-mechanical and semiempirical approaches. The values of deformation potentials and magnetic susceptibilities are determined. The results of calculations are compared with the available experimental data and the calculations of other authors. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：41 / 44

页数：4

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