A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

被引:11
作者
Kolmakov, AG
Emtsev, VV
Lundin, WV
Ratnikov, VV
Schmidt, NM
Titkov, AN
Usikov, AS
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 19401, Russia
[2] Inst Met, Moscow 117911, Russia
关键词
multifractal analysis; mosaic structured; GaN;
D O I
10.1016/S0921-4526(01)00917-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities, which are typical for GaN epitaxial layer with hexagonal modification grown on (0 0 0 1) sapphire substrates, have been obtained. A linear dependence of mobility on the multifractal parameters of surface topology of the mosaic structure (the self-organization degree and the disruption of the local symmetry has been observed in GaN layers. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1141 / 1144
页数:4
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