Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth

被引：6

作者：

Schulz, D ^{[1
]}

Wagner, G ^{[1
]}

Doerschel, J ^{[1
]}

Dolle, J ^{[1
]}

Eiserbeck, W ^{[1
]}

Muller, T ^{[1
]}

Rost, HJ ^{[1
]}

Siche, D ^{[1
]}

Wollweber, J ^{[1
]}

机构：

[1] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

growth schedule; silicon; surface morphology;

D O I：

10.1016/S0921-5107(98)00530-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface morphology of 6H-SiC layers grown by physical vapour transport (PVT) has been investigated using optical microscopy(OM) and atomic force microscopy (AFM). Experiments done in an environment, that represents the initial stages of PVT growth, have shown that crystal growth already occurs below 1900 degrees C under 850 hPa argon pressure. Both growth mode and defect generation at the interface were strongly influenced by the addition of excess silicon to the source material. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：86 / 88

页数：3

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