Preparation and microstructural studies of electrodeposited Cu2O thin films

被引：51

作者：

Mahalingam, I ^{[1
]}

Chitra, JSP

Chu, JP

Sebastian, PJ

机构：

[1] Algappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Univ Nacl Autonoma Mexico, Energy Res Ctr, Solar Hydrogen Fuel Cell Grp, Temixco 62580, Morelos, Mexico

[3] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 202, Taiwan

来源：

MATERIALS LETTERS | 2004年 / 58卷 / 11期

关键词：

cuprous oxide thin films; potentiostatic deposition; crystal structure; microstructural parameters; annealing studies; electrical properties;

D O I：

10.1016/j.matlet.2003.10.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cuprous oxide (Cu2O) thin films have been synthesised potentiostatically on Cu and tin oxide-coated substrates at various bath temperatures. X-ray diffraction studies showed the deposition of single-phase cubic Cu2O film with improved crystallinity at the optimum deposition parameter conditions. X-ray line profile analyses are carried out on Cu2O films and microstructural parameters are evaluated. The variations of microstructural parameters with deposition and annealing conditions are studied. (C) 2004 Elsevier B.V All rights reserved.

引用

页码：1802 / 1807

页数：6

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