Infrared waveguiding in Si(1-x-y)GexCy upon silicon

被引：18

作者：

Soref, RA

Atzman, Z

Shaapur, F

Robinson, M

Westhoff, R

机构：

[1] ARIZONA STATE UNIV,DEPT CHEM BIO & MAT ENGN,TEMPE,AZ 85287

[2] LAWRENCE SEMICOND RES LAB INC,TEMPE,AZ 85282

来源：

OPTICS LETTERS | 1996年 / 21卷 / 05期

关键词：

D O I：

10.1364/OL.21.000345

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Polarization-independent waveguiding at 1.32 and 1.54 mu m was observed in single-crystal S1-x-yGexCy grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 mu m. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93-0.99-eV range, in agreement with theory. (C) 1996 Optical Society of America

引用

页码：345 / 347

页数：3

共 7 条

[1] CHEMICAL-VAPOR-DEPOSITION OF HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES [J].