Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

被引：62

作者：

Mbarek, H ^{[1
]}

Saadoun, M ^{[1
]}

Bessaïs, B ^{[1
]}

机构：

[1] Inst Natl Rech Sci & Tech, Lab Photovolt & Semicond, Hammam Lif 2050, Tunisia

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2006年 / 26卷 / 2-3期

关键词：

ITO; thin films; gas sensors;

D O I：

10.1016/j.msec.2005.10.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：500 / 504

页数：5

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