Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

被引：18

作者：

Harada, C ^{[1
]}

Ko, HJ ^{[1
]}

Makino, H ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 5-6期

关键词：

MgZnO; Ga doping; phase separation; P-MBE;

D O I：

10.1016/j.mssp.2003.08.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the phase separation of Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy. Based on X-ray diffraction, low-temperature (10 K) photoluminescence, and reflection high-energy electron diffraction observations, it is possible to classify the phase of Ga-doped MgZnO layers into three regions depending on the incorporated Ga concentration ([Ga]). Single-phase Mg0.1Zn0.9O layers are grown when [Ga] is less than I x 10(18) cm(-3). For [Ga] between I X 10(18) cm(-3) and I X 10(20) cm(-3), ZnO and Mg0.2Zn0.8O coexist, where electron transport is considered to be via two-channel conduction. When [Ga] exceeds I X 10(20) cm(-3), the Ga-doped MgZnO layers become polycrystalline, where carrier compensation takes place presumably due to grain boundaries. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：539 / 541

页数：3

共 7 条

[1] Effect of exchange and correlation on bulk properties of MgO, NiO, and CoO [J].

Bredow, T ;

Gerson, AR .

PHYSICAL REVIEW B, 2000, 61 (08) :5194-5201

[2]

Galasso FS., 1970, STRUCTURE PROPERTIES

[3] Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Chen, YF ;

Hong, SK ;

Wenisch, H ;

Yao, T ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3761-3763

[4] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

[5] PHASE EQUILIBRIA AND MANGANESE-ACTIVATED FLUORESCENCE IN THE SYSTEM ZN3(PO4)2-MG3(PO4)2 [J].

SARVER, JF ;

KATNACK, FL ;

HUMMEL, FA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (11) :960-963

[6] GRAIN-BOUNDARY INTERFACE ELECTRON TRAPS IN COMMERCIAL ZINC-OXIDE VARISTORS [J].

WINSTON, RA ;

CORDARO, JF .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6495-6500

[7] Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition [J].

Yan, M ;

Lane, M ;

Kannewurf, CR ;

Chang, RPH .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2342-2344

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