High-performance active gate drive for high-power IGBT's

被引：100

作者：

John, V ^{[1
]}

Suh, BS ^{[1
]}

Lipo, TA ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1999年 / 35卷 / 05期

关键词：

active gate drive; gate drive circuit; gate resistor; insulated gate bipolar transistor switching transient;

D O I：

10.1109/28.793372

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper deals with an active gate drive (AGD) technology for high-power insulated gate bipolar transistors (IGBT's). it is based on an optimal combination of several requirements necessary for good switching performance under hard-switching conditions. The scheme specifically combines together the slow drive requirements; for low noise and switching stress and the fast drive requirements for high-speed switching and low switching energy loss. The gate drive can also effectively dampen oscillations during low-current turn-on transient in the IGBT. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage AGD technique can be an effective solution.

引用

页码：1108 / 1117

页数：10

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