Enhancement of CsLiB6O10 surface-damage resistance by improved crystallinity and ion-beam etching

被引：21

作者：

Kamimura, T

Fukumoto, S

Ono, R

Yap, YK

Yoshimura, M

Mori, Y

Sasaki, T

Yoshida, K

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

[2] Osaka Inst Technol, Dept Elect Engn, Asahi Ku, Osaka 5358585, Japan

来源：

OPTICS LETTERS | 2002年 / 27卷 / 08期

关键词：

D O I：

10.1364/OL.27.000616

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The surface laser-induced damage threshold (LIDT) of CsLiB6O10 (CLBO) crystal was enhanced twofold with improved crystallinity and ion-beam etching. For crystals with high crystal quality (bulk LIDT, 15.0-19.0 GW/cm(2)), the surface LIDT was 1.4-fold higher than for those with conventional crystal quality (bulk LIDT, 9.0-12.0 GW/cm(2)). In addition, removal of residual surface-polishing compounds by means of ion-beam etching can further enhance the surface LIDT by another 1.5-fold. Thus, CLBO crystals with high crystal quality and ion-beam etching are now more reliable for high-power UV light generation. (C) 2002 Optical Society of America.

引用

页码：616 / 618

页数：3

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