Characteristics of Ru buffer layer for EUVL mask patterning

被引：11

作者：

Lee, BT ^{[1
]}

Hoshino, E ^{[1
]}

Takahashi, M ^{[1
]}

Yoneda, T ^{[1
]}

Yamanashi, H ^{[1
]}

Hoko, H ^{[1
]}

Chiba, A ^{[1
]}

Ito, M ^{[1
]}

Ryoo, MH ^{[1
]}

Ogawa, T ^{[1
]}

Okazaki, S ^{[1
]}

机构：

[1] NTT, Telecommun Energy Labs, Atsugi Res Ctr, Assoc Super Adv Elect Technol, Kanagawa 2430198, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES V | 2001年 / 4343卷

关键词：

extreme ultraviolet lithography; mask patterning; Ru; buffer layer; etching selectivity;

D O I：

10.1117/12.436699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of Ru film were examined to determine its suitability as a buffer layer for EUV mask patterning. When etched in an O-2/Cl-2 gas mixture with a high Cl-2 content at a low total gas flow rate, Ru exhibited a high etching selectivity with respect to a-Si, the top layer of a Mo/Si multilayer mirror. This could enable use of a simpler mask patterning process without any damage to the multilayer. The patterning of a mask with a TaN absorber layer and a Ru buffer layer was demonstrated. Etching the TaN with an Ar/Cl-2 gas mixture yielded a high etching selectivity with respect to Ru of over 30:1. In addition, the use of Ru rather than SiO2 for the buffer layer improved the DUV inspection contrast of TaN mask patterns before and after buffer layer etching. Finally, Ru is etched more slowly than SiO2 by a focused ion beam, which makes it more suitable as a sacrificial layer during repair.

引用

页码：746 / 753

页数：8

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