Dopant penetration effects on polysilicon gate HfO2 MOSFET's

被引：51

作者：

Onishi, K ^{[1
]}

Kang, L ^{[1
]}

Choi, R ^{[1
]}

Dharmarajan, E ^{[1
]}

Gopalan, S ^{[1
]}

Jeon, Y ^{[1
]}

Kang, CS ^{[1
]}

Lee, BH ^{[1
]}

Nieh, R ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78758 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934984

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of dopant penetration on electrical characteristics of polysilicon gate HfO2 gate dielectric MOSFET's has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V-fb) but channel carrier mobility. Surface nitridation prior to HfO2 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

引用

页码：131 / 132

页数：2

共 4 条

[1] MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics [J].

Kang, LG ;

Onishi, K ;

Jeon, YJ ;

Lee, BH ;

Kang, CS ;

Qi, WJ ;

Nieh, R ;

Gopalan, S ;

Choi, R ;

Lee, JC .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :35-38

[2] Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al2O3 gate dielectric [J].

Lee, JH ;

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Kim, MH ;

Fujihara, K ;

Kang, HK ;

Moon, JT .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :645-648

[3] High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode [J].

Lee, SJ ;

Luan, HF ;

Bai, WP ;

Lee, CH ;

Jeon, TS ;

Senzaki, Y ;

Roberts, D ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :31-34

[4] Performance of MOSFETs with ultra thin ZrO2 and Zr silicate gate dielectrics [J].

Qi, WJ ;

Nieh, R ;

Lee, BH ;

Onishi, K ;

Kang, LG ;

Jeon, Y ;

Lee, JC ;

Kaushik, V ;

Neuyen, BY ;

Prabhu, L ;

Eisenbeiser, K .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :40-41

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