The role of step edge diffusion in epitaxial crystal growth

被引:24
作者
Schinzer, S [1 ]
Kinne, M [1 ]
Biehl, M [1 ]
Kinzel, W [1 ]
机构
[1] Univ Wurzburg, Inst Theoret Phys, D-97074 Wurzburg, Germany
关键词
computer simulations; growth; models of surface kinetics; surface diffusion; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(99)00761-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound-like structures. By comparing the limiting cases of absent, very fast (significant), and slow SED we demonstrate how the details of this process control both the shape of the emerging structures and the scaling behavior. We find a sharp transition from significant SED to intermediate values of SED, and a continuous one for vanishing SED. We argue that one should be able to control these features of the surface in experiments by variation of the flux and substrate temperature. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:191 / 198
页数:8
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