Electrical properties of hard materials

被引:74
作者
Williams, WS [1 ]
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0263-4368(99)00005-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Some materials are as hard as ceramics but contain conduction electrons i.e., "metallic ceramics". The ones described are monocarbides of Group IV and V transition metals: TiC, ZrC, HfC, and VC, NbC, TaC, and one of Group VI: WC. The IV and V materials can be useful because of certain properties - high melting points, high hardness, low diffusion rates of metal and carbon, little change in resistivity at high temperatures, low electromigration, corrosion resistance; the applications can be to microelectronic devices and to high-temperature switches and resistors. One reason for the saturation of this electrical resistivity at high temperatures is a large residual resistivity due to scattering of conduction electrons by random carbon vacancies (point defects) in these non-stoichiometric compounds, e.g., TiCx, where x represents the carbon-to-metal ratio, and 1-x represents the carbon vacancy concentration, which can range from 3% to 50%. A second reason is a parallel resistor effect due to interband scattering of these electrons in the complex electron band structure. But specific compositions of these non-stoichiometric compounds can shift to periodic structures and eliminate the residual resistivity, thus increasing the temperature dependence at low temperatures but not at high temperatures because of interband scattering. WC, which is stoichiometric, has a near zero residual resistivity and a strong temperature dependence. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:21 / 26
页数:6
相关论文
共 12 条
[1]   BOLTZMANN THEORY GENERALIZED TO INCLUDE BAND MIXING - POSSIBLE THEORY FOR RESISTIVITY SATURATION IN METALS [J].
CHAKRABORTY, B ;
ALLEN, PB .
PHYSICAL REVIEW LETTERS, 1979, 42 (11) :736-738
[2]  
COTTRELL AH, 1994, MATER SCI TECH SER, V10, P22, DOI 10.1179/026708394790163384
[3]   RESISTIVITY, SUPERCONDUCTIVITY, AND ORDER-DISORDER TRANSFORMATIONS IN TRANSITION-METAL CARBIDES AND HYDROGEN-DOPED CARBIDES [J].
DY, LC ;
WILLIAMS, WS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8915-8927
[4]   THERMODYNAMICS OF ORDER-DISORDER TRANSFORMATIONS IN VANADIUM CARBIDE [J].
EMMONS, GH ;
WILLIAMS, WS .
JOURNAL OF MATERIALS SCIENCE, 1983, 18 (09) :2589-2602
[5]  
ERN V, 1965, PHYS REV, V137, P1927
[6]  
GUBANOV VA., 1994, Electronic Structure of Refractory Carbides and Nitrides
[7]   ELECTRICAL-PROPERTIES OF TRANSITION-METAL CARBIDES OF GROUP-IV [J].
MODINE, FA ;
FOEGELLE, MD ;
FINCH, CB ;
ALLISON, CY .
PHYSICAL REVIEW B, 1989, 40 (14) :9558-9564
[8]  
NESHPOR VS, 1966, INORGANIC MASTERIALS, V2, P865
[9]  
PIERSON HO, 1996, HDB REFRACTORY CARBI, V63
[10]   BAND-STRUCTURE AND CHEMICAL BONDING IN TRANSITION-METAL CARBIDES AND NITRIDES [J].
SCHWARZ, K .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1987, 13 (03) :211-257