Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2-b][1]benzothiophene Semiconductor Layer

被引：181

作者：

Amin, Atefeh Y. ^{[1
]}

Khassanov, Artoem ^{[1
]}

Reuter, Knud ^{[2
]}

Meyer-Friedrichsen, Timo ^{[2
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci, Inst Polymer Mat, D-91058 Erlangen, Germany

[2] Heraeus Precious Met GmbH&Co KG, D-51368 Leverkusen, Germany

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 40期

关键词：

THRESHOLD-VOLTAGE; HIGH-PERFORMANCE; HIGH-MOBILITY;

D O I：

10.1021/ja307802q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C-13-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V.s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT pi-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

引用

页码：16548 / 16550

页数：3

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