CuGaSe2-CuGa3Se5 phase transition in CCSVT-grown thin films

被引：14

作者：

Lehmann, S.

Baer, M.

Marron, D. Fuertes

Pistor, P.

Wiesner, S.

Rusu, M.

Koetschau, I.

Lauermann, I.

Grimm, A.

Sokoll, S.

Fischer, Ch. -H.

Schedel-Niedrig, Th.

Lux-Steiner, M. Ch.

Jung, Ch.

机构：

[1] Hahn Meitner Inst Berlin GmbH, Dept SE, D-14109 Berlin, Germany

[2] BESSY, D-12489 Berlin, Germany

来源：

THIN SOLID FILMS | 2006年 / 511卷

关键词：

CuGaSe2; CuGa3Se5; phase-transition; CCSVT; thin-film; XES; XRD;

D O I：

10.1016/j.tsf.2005.11.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The system CuGaSe2-CuGa3Se5 in thin films has been investigated. Layer synthesis was carried out by chemical close-spaced vapour transport (CCSVT) using Cu precursors on Mo/soda-lime glass substrates. The extension of deposition times in a two-step process led to final film compositions with [Ga]/[Cu] ratios ranging from 1 to 3, allowing the study of the phase transition mentioned above. Films showing chalcopyrite (1:1:2), OVC (1:3:5) and both phases were grown. X-ray emission spectroscopy and X-ray diffraction (XRD) techniques have been combined for a compositional and structural study of this material system probing both bulk and near surface properties of the films. This analysis was also extended to the rear-surface investigation of selected two-phase thin films and complemented with surface sensitive photoelectron spectroscopy (PES). From these results a growth model is presented for CuGa3Se5 formation in gallium rich, CCSVT-grown CuGaxSey-films. (c) 2006 Published by Elsevier B.V.

引用

页码：623 / 627

页数：5

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