Effects of annealing on local composition and electrical transport correlations in MgO-based magnetic tunnel junctions

被引：24

作者：

Chiaramonti, A. N. ^{[1
]}

Schreiber, D. K. ^{[1
,2
]}

Egelhoff, W. F. ^{[3
]}

Seidman, David N. ^{[2
,4
]}

Petford-Long, A. K. ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] NIST, Magnet Mat Grp, Gaithersburg, MD 20899 USA

[4] Northwestern Univ, Ctr Atom Probe Tomog, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.2970964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of annealing on the electrical transport behavior of CoFe/MgO/CoFe magnetic tunnel junctions have been studied using a combination of site-specific in situ transmission electron microscopy and three-dimensional atom-probe tomography. Annealing leads to an increase in the resistance of the junctions. A shift in the conductance curve (dI/dV) minimum from 0 V for the as-grown specimen correlates with a sharply defined layer of CoFe oxide at the lower ferromagnetic interface. Annealing decreases the asymmetry in the conductance by making the interfaces more diffuse and the tunnel barrier more chemically homogeneous. (c) 2008 American Institute of Physics.

引用

页数：3

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