共 9 条
[3]
Nakamura S., 1997, BLUE LASER DIODE GAN
[4]
NAKAMURA S, IN PRESS JPN J APPLP
[6]
PANKOVE JI, 1997, INT J NITRIDE SEMICO, V2, P19
[9]
Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1997, 36 (7B)
:L899-L902