Secondary electron image profiles using bias voltage technique in deep contact hole

被引：5

作者：

Ko, YU ^{[1
]}

Joy, DC ^{[1
]}

Sullivan, N ^{[1
]}

Mastovich, ME ^{[1
]}

机构：

[1] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷

关键词：

deep contact hole; secondary electron; charging; bias voltage technique;

D O I：

10.1117/12.436786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charging effects on secondary electron (SE) profiles with bias voltage in deep contact holes are investigated. We show first in detail the SE beam profiles for operating conditions such as scanning time, current and landing energy, the brightness of the bottom of the contact hole depends on the charge of SE yield with incident energy. We conclude that we can enhance the contrast of the beam profile by optimizing the applied bias voltage.

引用

页码：37 / 45

页数：9

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