Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors

被引：360

作者：

Di, Chong-an ^{[1
,2
]}

Wei, Dacheng ^{[1
,2
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

Guo, Yunlong ^{[1
,2
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 17期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1002/adma.200800150

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.

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收藏

页码：3289 / +

页数：6

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