Design, fabrication, position sensing, and control of an electrostatically-driven polysilicon microactuator

被引:33
作者
Cheung, P [1 ]
Horowitz, R [1 ]
Howe, RT [1 ]
机构
[1] UNIV CALIF BERKELEY, BERKELEY SENSOR & ACTUATOR CTR, BERKELEY, CA USA
关键词
D O I
10.1109/20.477561
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design, fabrication, position sensing, and control of an electrostatically-driven microactuator. The polysilicon microactuator, together with an on-chip electronic buffer, were fabricated by the Modular Integration of CMOS and microStructure (MICS) technology. The microactuator has a linear dimension of 310 mu m x 340 mu m x 1.7 mu m and a ''long throw'' range of motion of +/- 4 mu m. The driving comb fingers of the microactuator can generate up to 0.3 mu N of electrostatic force, which is able to pull the suspended microactuator across the substrate at an acceleration of over 270 G's. The lateral position of the microactuator, relative to the substrate, is capacitively sensed by a Kalman filtering scheme, which achieves a position estimation error covariance below 0.01 mu m RMS, A state-variable feedback loop operates at a closed loop bandwidth of over 11 kHz. Experimental results are given.
引用
收藏
页码:122 / 128
页数:7
相关论文
共 17 条
[1]  
BUSTILLO JM, 1994, MICROSYST TECHNOL, V1, P30
[2]  
CHEUNG PCP, 1995, THESIS U CALIFORNIA
[3]  
CORE TA, 1993, SOLID STATE TECHNOL, V36, P39
[4]  
FAN LS, 1995, IEEE T IND ELECTRON, V42, P222
[5]  
Fedder GK., 1994, Simulation of microelectromechanical systems
[6]  
FEDDER GK, 1994, JUN IEEE SOL STAT SE, P63
[7]  
GUCKEL H, 1992, 11TH P SENS S TOK JA, P1
[8]  
HOWE RT, 1995, 13TH SENS S IEE JAP
[9]  
Judy M.W., 1994, Micromechanisms using sidewall beams
[10]  
Kailath T., 1980, Linear systems