Side-Chain Isomerization on an n-type Organic Semiconductor ITIC Acceptor Makes 11.77% High Efficiency Polymer Solar Cells

被引:854
作者
Yang, Yankang [1 ,3 ]
Zhang, Zhi-Guo [1 ]
Bin, Haijun [1 ,3 ]
Chen, Shanshan [2 ]
Gao, Liang [1 ,3 ]
Xue, Lingwei [1 ]
Yang, Changduk [2 ]
Li, Yongfang [1 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Ulsan Natl Inst Sci & Technol, Low Dimens Carbon Mat Ctr, Sch Energy & Chem Engn, Dept Energy Engn, Ulsan 689798, South Korea
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Soochow Univ, Coll Chem Chem Engn & Mat Sci, Lab Adv Optoelect Mat, Suzhou 215123, Jiangsu, Peoples R China
关键词
POWER CONVERSION EFFICIENCY; NON-FULLERENE ACCEPTOR; FIELD-EFFECT TRANSISTORS; ELECTRON-ACCEPTORS; NONFULLERENE ACCEPTORS; PHOTOVOLTAIC PROPERTIES; ALTERNATIVE STRATEGY; CONJUGATED POLYMERS; 3D STRUCTURE; RING-FUSION;
D O I
10.1021/jacs.6b09110
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low bandgap n-type organic semiconductor (n-OS) ITIC has attracted great attention for the application as an acceptor with medium bandgap p-type conjugated polymer as donor in nonfullerene polymer solar cells (PSCs) because of its attractive photovoltaic performance. Here we report a modification on the molecular structure of ITIC by side-chain isomerization with meta-alkylphenyl substitution, m-ITIC, to further improve its photovoltaic performance. In a comparison with its isomeric counterpart ITIC with para-alkyl-phenyl substitution, m-ITIC shows a higher film absorption coefficient, a larger crystalline coherence, and higher electron mobility. These inherent advantages of m-ITIC resulted in a higher power conversion efficiency (PCE) of 11.77% for the nonfullerene PSCs with m-ITIC as acceptor and a medium bandgap polymer J61 as donor, which is significantly improved over that (10.57%) of the corresponding devices with ITIC as acceptor. To the best of our knowledge, the PCE of 11.77% is one of the highest values reported in the literature to date for nonfullerene PSCs. More importantly, the m-ITIC-based device shows less thickness-dependent photovoltaic behavior than ITIC-based devices in the active-layer thickness range of 80-360 nm, which is beneficial for large area device fabrication. These results indicate that m-ITIC is a promising low bandgap n-OS for the application as an acceptor in PSCs, and the side-chain isomerization could be an easy and convenient way to further improve the photovoltaic performance of the donor and acceptor materials for high efficiency PSCs.
引用
收藏
页码:15011 / 15018
页数:8
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