A high-mobility electron-transporting polymer for printed transistors

被引：2695

作者：

Yan, He ^{[1
]}

Chen, Zhihua ^{[1
]}

Zheng, Yan ^{[1
]}

Newman, Christopher ^{[1
]}

Quinn, Jordan R. ^{[1
]}

Dotz, Florian ^{[2
]}

Kastler, Marcel ^{[3
]}

Facchetti, Antonio ^{[1
]}

机构：

[1] Polyera Corp, Skokie, IL 60077 USA

[2] BASF Global Res Ctr Singapore, Singapore 112575, Singapore

[3] BASF SE, GKS E B001, D-67056 Ludwigshafen, Germany

来源：

NATURE | 2009年 / 457卷 / 7230期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; CHARGE-TRANSPORT; GATE DIELECTRICS; DESIGN; SEMICONDUCTORS; TRANSITION; DISPLAYS; VOLTAGE;

D O I：

10.1038/nature07727

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin- film transistor (OTFT) fabrication. In addition to having excellent charge- transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low- temperature processing. Furthermore, compatibility of both p- channel (hole- transporting) and n- channel (electron- transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n- channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p- channel polymers are widely available, the achievement of high- performance n- channel polymers is more challenging. Here we report a highly soluble (similar to 60 g l(-1)) and printable n- channel polymer exhibiting unprecedented OTFT characteristics ( electron mobilities up to similar to 0.45 - 0.85 cm(2) V-1 s(-1)) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top- gate OTFTs on plastic substrates were fabricated with the semiconductor- dielectric layers deposited by spin- coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all- printed polymeric complementary inverters ( with gain 25-65) have been demonstrated.

引用

页码：679 / U1

页数：9

共 51 条

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