Effect of intense laser irradiation on the lattice stability of semiconductors and metals

被引：261

作者：

Recoules, V

Clérouin, J

Zérah, G

Anglade, PM

Mazevet, S

机构：

[1] CEA, DAM Ile France, Dept Phys Theor & Appl, F-91680 Bruyeres Le Chatel, France

[2] Ecole Normale Super, CECAM, F-69364 Lyon 7, France

[3] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.96.055503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of intense ultrashort irradiation on interatomic forces, crystal stability, and possible melting transition of the underlying lattice is not completely elucidated. By using ab initio linear response to compute the phonon spectrum of gold, silicon, and aluminum, we found that silicon and gold behave in opposite ways when increasing radiation intensity: whereas a weakening of the silicon bond induces a lattice instability, gold undergoes a sharp increase of its melting temperature, while a significantly smaller effect is observed for aluminum for electronic temperatures up to 6 eV.

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页数：4

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