A macro model of programmable metallization cell devices

被引：20

作者：

Gilbert, NE

Gopalan, C

Kozicki, MN

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Desert Microtechnol Associates Inc, Scottsdale, AZ 85260 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 11期

关键词：

solid electrolyte; macro model; non-volatile memory; programmable metallization cell; AG; FILMS;

D O I：

10.1016/j.sse.2005.10.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new macro model for programmable metallization cell (PMC) devices developed using PSPICE and incorporating only common circuit elements used in all SPICE-based programs. The model encompasses both pseudo DC and transient conditions and comprises an equivalent parasitic circuit of the device element and a circuit which represents the complex dynamic operation of the device. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1813 / 1819

页数：7

共 6 条

[1] Non-volatile memory based on solid electrolytes [J].