Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures.

被引:47
作者
Boeve, H
Bruynseraede, C
Das, J
Dessein, K
Borghs, G
De Boeck, J
Sousa, RC
Melo, LV
Freitas, PP
机构
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] INESC, Lisbon, Portugal
关键词
Magnetic Random Access Memories; spin-valve; tunnel-junction;
D O I
10.1109/20.800992
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future.
引用
收藏
页码:2820 / 2825
页数:6
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