Electro-ferrite plating of magnetite at 24-80°C

被引：11

作者：

Nishimura, K ^{[1
]}

Kitamoto, Y ^{[1
]}

Abe, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

基金：

日本学术振兴会;

关键词：

ferrite film; magnetite; ferrite plating; room-temperature synthesis;

D O I：

10.1109/20.801079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At room temperature (24 degrees C) magnetite (Fe3O4) films are successfully grown from an aqueous solution utilizing anodic oxidation of Fe2+ to Fe3+, Applying D.C. anodic voltage of 0.4V, single phase Fe3O4 films are grown at various temperatures from 24 to 80 degrees C on NESA glass substrates from mixed solutions of FeCl2 + NH3. Fixing the concentration of FeCl2 the concentrations at which we can obtain the highest film deposition rate are determined at 24 degrees C and 80 degrees C. The films have saturation magnetization of magnitude equal to that of bulk sample.

引用

页码：3043 / 3045

页数：3

共 6 条

[1] DIRECT FORMATION OF FERRITE FILMS IN WET PROCESS [J].