Thermo-optically controlled ring resonator on silicon

被引：7

作者：

Katila, P ^{[1
]}

Heimala, P ^{[1
]}

Aarnio, J ^{[1
]}

机构：

[1] NOKIA RES CTR,FIN-00211 HELSINKI,FINLAND

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 11期

关键词：

optical resonators; integrated optics;

D O I：

10.1049/el:19960640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature controlled integrated optical ring resonator processed on a silicon substrate is studied using integrated polysilicon healer and thermistor elements. The response speed of the optical 2 pi phase shift is evaluated as the surface temperature of the device is measured with the thermistor. The effect of an applied heat sink on the device operation is studied.

引用

页码：1005 / 1006

页数：2

共 6 条

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THIRSTRUP, C .

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[4]

SASAYAMA K, 1993, P ECOC 93 MONTR SWIT, P545

[5]

Sugita A., 1990, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE73, P105

[6]

ULBERS G, 1991, P SOC PHOTO-OPT INS, V1506, P99, DOI 10.1117/12.45963

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