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Investigation of the defect structure of GaN heavily doped with oxygen

被引：19
作者：
Korotkov, RY
Niu, F
Gregie, JM
Wessels, BW
机构：
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
O-doped GaN; microcavities; photoluminescence;
D O I：
10.1016/S0921-4526(01)00658-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The defect structure of oxygen-doped GaN grown by MOVPE was investigated. At high oxygen pressures, a super-linear increase of electron concentration as a function of partial pressure was observed. Electron concentrations as high as 7 x 10(19) cm(-3) were measured. Formation of micropits was observed by scanning electron microscopy in heavily doped samples. Cross-sectional transmission electron microscopy studies indicated the presence of epitaxial precipitates located on the cavity surface. The precipitates are believed to be related to gallium oxide. Using spatially resolved photoluminescence (PL), a broad PL band at 3.56eV was observed near the micropit regions. The band was attributed to free-electron recombination from the highly degenerate areas associated with oxygen. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：26 / 29
页数：4
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