An integrated analog/digital random noise source

被引：143

作者：

Holman, WT

Connelly, JA

Dowlatabadi, AB

机构：

[1] GEORGIA INST TECHNOL, SCH ELECT & COMP ENGN, ATLANTA, GA 30332 USA

[2] ENABLE SEMICOND INC, SAN JOSE, CA 95110 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 1997年 / 44卷 / 06期

关键词：

1/f noise; CMOS integrated circuits; data encryption; lateral PNP transistor; low frequency noise; random noise source;

D O I：

10.1109/81.586025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated noise source (INS) has been fabricated in a standard 1.2 mu m digital CMOS technology, Wideband white noise is generated from the amplified thermal noise of large resistors, which in turn is coupled into a comparator to generate a random digital bit stream, The INS generates 100 mV rms of analog output noise over a bandwidth of 3.2 MHz and operates from a single 5 V power supply with a quiescent current of 7.4 mA. The circuit has an area of 2.92 mm(2). Potential applications of the INS include data encryption, mathematical simulation, and circuit test and measurement.

引用

页码：521 / 528

页数：8

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