Progress in SiC:: from material growth to commercial device development

被引：106

作者：

Carter, CH ^{[1
]}

Tsvetkov, VF ^{[1
]}

Glass, RC ^{[1
]}

Henshall, D ^{[1
]}

Brady, M ^{[1
]}

Müller, SG ^{[1
]}

Kordina, O ^{[1
]}

Irvine, K ^{[1
]}

Edmond, JA ^{[1
]}

Kong, HS ^{[1
]}

Singh, R ^{[1
]}

Allen, ST ^{[1
]}

Palmour, JW ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27703 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC; wafers; micropipe; epitaxy; diode; microwave; blue LED;

D O I：

10.1016/S0921-5107(98)00437-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide technology has made tremendous strides in the last several years, with a variety of encouraging device and circuit demonstrations in addition to volume production of nitride-based blue LEDs being fabricated on SIC substrates. The commercial availability of relatively large, high quality wafers of the 6H and 4H polytypes of SiC for device development has facilitated these exciting breakthroughs in laboratories throughout the world. These have occurred in numerous application areas, including high power devices, short wavelength optoelectronic devices, and high power/high frequency devices. This paper will describe progress made in increasing the quality and size of SiC wafers, advances in SIC epitaxy and some of the resulting device demonstrations and commercialization by Cree Research. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：1 / 8

页数：8

共 11 条

[1]

Glass RC, 1996, INST PHYS CONF SER, V142, P37

[2]

KEYKAMP H, 1993, PHYS CHEM, V97, P799

[3]

KIMOTO T, 1996, I PHYS C SER, V142, P921

[4]

Kordina O, 1997, PHYS STATUS SOLIDI B, V202, P321, DOI 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO

[5]

2-H

[6]

KORDINA O, 1998, P INT C SIL CARB 3 N, P97

[7]

PALMOUR JW, 1996, 54 ANN DEV RES C DIG, P54

[8] THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND [J].

SLACK, GA .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3460-+

[9] 1.4kV 4H-SiC UMOSFET with low specific on-resistance [J].

Sugawara, Y ;

Asano, K .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :119-122

[10] THE POTENTIAL OF DIAMOND AND SIC ELECTRONIC DEVICES FOR MICROWAVE AND MILLIMETER-WAVE POWER APPLICATIONS [J].

TREW, RJ ;

YAN, JB ;

MOCK, PM .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :598-620

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