Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction

被引:1307
作者
Han, WQ
Fan, SS
Li, QQ
Hu, YD
机构
[1] TSING HUA UNIV,DEPT PHYS,BEIJING 100084,PEOPLES R CHINA
[2] TSING HUA UNIV,CTR ATOM & MOL SCI,BEIJING 100084,PEOPLES R CHINA
关键词
D O I
10.1126/science.277.5330.1287
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Gallium nitride nanorods were prepared through a carbon nanotube-confined reaction. Ga2O vapor was reacted with NH3 gas in the presence of carbon nanotubes to form wurtzite gallium nitride nanorods. The nanorods have a diameter of 4 to 50 nanometers and a length of up to 25 micrometers. It is proposed that the carbon nanotube acts as a template to confine the reaction, which results in the gallium nitride nanorods having a diameter similar to that of the original nanotubes. The results suggest that it might be possible to synthesize other nitride nanorods through similar carbon nanotube-confined reactions.
引用
收藏
页码:1287 / 1289
页数:3
相关论文
共 15 条
[1]   Low pressure synthesis of bulk, polycrystalline gallium nitride [J].
Argoitia, A ;
Hayman, CC ;
Angus, JC ;
Wang, L ;
Dyck, JS ;
Kash, K .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :179-181
[2]  
ATUKI T, 1995, APPL PHYS LETT, V67, P2188
[3]   Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].
Balkas, CM ;
Davis, RF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312
[4]   SYNTHESIS AND CHARACTERIZATION OF CARBIDE NANORODS [J].
DAI, HJ ;
WONG, EW ;
LU, YZ ;
FAN, SS ;
LIEBER, CM .
NATURE, 1995, 375 (6534) :769-772
[5]   PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].
FROSCH, CJ ;
THURMOND, CD .
JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&
[6]  
GANSALVAES KE, 1996, J MATER CHEM, V6, P1451
[7]  
HAN H, 1997, CHEM PHYS LETT, V265, P374
[8]   HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].
IIJIMA, S .
NATURE, 1991, 354 (6348) :56-58
[9]   Coating of carbon nanotube with nickel by electroless plating method [J].
Li, QQ ;
Fan, SH ;
Han, WQ ;
Sun, CH ;
Liang, WJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (4B) :L501-L503
[10]   EMERGING GALLIUM NITRIDE BASED DEVICES [J].
MOHAMMAD, SN ;
SALVADOR, AA ;
MORKOC, H .
PROCEEDINGS OF THE IEEE, 1995, 83 (10) :1306-1355