Charge sensing in carbon-nanotube quantum dots on microsecond timescales

被引：38

作者：

Biercuk, MJ ^{[1
]}

Reilly, DJ

Buehler, TM

Chan, VC

Chow, JM

Clark, RG

Marcus, CM

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Univ New S Wales, Ctr Quantum Comp Technol, Sch Phys, Sydney, NSW 2052, Australia

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.73.201402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio-frequency (rf) single electron transistors capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows the fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.

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页数：4

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