ZnO-doped BaTiO3: Microstructure and electrical properties

被引:62
作者
Caballero, AC [1 ]
Fernandez, JF [1 ]
Moure, C [1 ]
Duran, P [1 ]
机构
[1] CSIC,INST CERAM & VIDRIO,ELECTROCERAM DEPT,ARGANDA 28500,MADRID,SPAIN
关键词
D O I
10.1016/S0955-2219(96)00096-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present work, ZnO additions ranging from 0.1 to 10 wt% to ceramic BaTiO3 have been studied. By means of a controlled processing, two different compounds were tested as a source of ZnO. The dopant distribution plays a key role in the microstructural development of the ZnO-doped BaTiO3. When zinc stearate was used, homogeneous fine-grained microstructure was obtained for 0.1 wt% of ZnO. However, high density was avoided by burn out of the long organic chain. When solid ZnO was used as dopant, homogeneous fine-grained microstructure and density values around 99% D-t (D-t = 6.017 g cm(-3)) were obtained for ZnO compositions starting from 0.5 wt%. The sintering temperature was 100 degrees C lower than for undoped BaTiO3. Control of grain growth in a wide temperature range led to ceramics with permittivity values close to 3000 and dielectric losses well below 1%. The incorporation of Zn2+ cations into the BaTiO3 lattice takes place in Ba2+ sites, i.e. as an isovalent dopant. The solid solubility of ZnO in BaTiO3 was stated to fall below 0.5 wt% in the range of sintering temperatures studied. Additions of large amounts of ZnO led to BaTiO3-ZnO composite materials. (C) 1997 Elsevier Science Limited. All rights reserved.
引用
收藏
页码:513 / 523
页数:11
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